MOS characteristics of ultrathin SiO/sub 2/ prepared by oxidizing Si in N/sub 2/O

MOS characteristics of ultrathin gate oxides prepared by furnace oxidizing Si in N/sub 2/O have been studied. Compared to control oxides grown in O/sub 2/, N/sub 2/O oxides exhibit significantly improved resistance to charge trapping and interface state generation under hot-carrier stressing. In add...

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Bibliographic Details
Published in:IEEE electron device letters 1991-08, Vol.12 (8), p.416-418
Main Authors: Ting, W., Lo, G.Q., Ahn, J., Chu, T.Y., Kwong, D.L.
Format: Article
Language:English
Subjects:
Annealing
Breakdown voltage
Character generation
Electric breakdown
Interface states
MOS capacitors
Nitrogen
Oxidation
Stress
Temperature
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Summary:MOS characteristics of ultrathin gate oxides prepared by furnace oxidizing Si in N/sub 2/O have been studied. Compared to control oxides grown in O/sub 2/, N/sub 2/O oxides exhibit significantly improved resistance to charge trapping and interface state generation under hot-carrier stressing. In addition, both charge to breakdown and time to breakdown are improved considerably. MOSFETs with N/sub 2/O gate dielectrics exhibit enhanced current drivability and improved resistance to g/sub m/ degradation during channel hot-electron stressing.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.119150