Monolithic, integrated high-Q inductors for RF applications

This paper presents high-Q inductors processed on 500 Ohmcm silicon substrates using a mature three layer copper metallization. The fabricated inductors have been characterized with a wide banded Q maximum roughly centered at 2GHz. The maximum Q values range from Q/sub max/ = 14 for a 20nH inductor...

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Bibliographic Details
Main Authors: Eisener, B., Buyuktas, K., Rugemer, A., Kebinger, H., Herzum, C.
Format: Conference Proceeding
Language:English
Subjects:
Band pass filters
Circuit simulation
Copper
Electrostatic discharge
Inductors
Metallization
Mobile handsets
Personal communication networks
Radio frequency
Silicon
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Summary:This paper presents high-Q inductors processed on 500 Ohmcm silicon substrates using a mature three layer copper metallization. The fabricated inductors have been characterized with a wide banded Q maximum roughly centered at 2GHz. The maximum Q values range from Q/sub max/ = 14 for a 20nH inductor up to Q/sub max/ = 40 for a 0.5nH inductor. By means of a 1.5nH inductor the influence of metal line width and different metallization stacks on the Q value vs. frequency behavior is presented. One typical application for these inductors are integrated passive bandpass filters for mobile phone applications. We present an ESD stable H3-bandpass-filter for PCN/PCS-applications with a low insertion loss of -1.45dB and high 3rd harmonic suppression of at least -40dB. The circuit simulations have shown an excellent correlation to the S-parameter measurement data which avoid time consuming 3D field simulations leading to reduced time to market.
DOI:10.1109/SMIC.2003.1196681