Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes

GaN Schottky diodes were built internally inside the GaN green LEDs by using etching and redeposition techniques. By properly selecting the etching areas underneath the bonding pads, one can minimize the optical loss due to the etching process. Although the reverse current and the forward turn-on vo...

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Bibliographic Details
Published in:IEEE electron device letters 2003-03, Vol.24 (3), p.129-131
Main Authors: Chang, S.J., Chen, C.H., Su, Y.K., Sheu, J.K., Lai, W.C., Tsai, J.M., Liu, C.H., Chen, S.C.
Format: Article
Language:English
Subjects:
Bonding
Devices
Electric potential
Electrostatic discharge
Electrostatic discharges
Etching
Gallium nitride
Gallium nitrides
Light emitting diodes
Optical losses
Protection
Quantum well devices
Schottky diodes
Threshold voltage
Voltage
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Summary:GaN Schottky diodes were built internally inside the GaN green LEDs by using etching and redeposition techniques. By properly selecting the etching areas underneath the bonding pads, one can minimize the optical loss due to the etching process. Although the reverse current and the forward turn-on voltage were both higher for the GaN LED with a Schottky diode, it was found that the internal Schottky diode could significantly increase the electrostatic discharge threshold from 450 to 1300 V.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2003.809043