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Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes
GaN Schottky diodes were built internally inside the GaN green LEDs by using etching and redeposition techniques. By properly selecting the etching areas underneath the bonding pads, one can minimize the optical loss due to the etching process. Although the reverse current and the forward turn-on vo...
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| Published in: | IEEE electron device letters 2003-03, Vol.24 (3), p.129-131 |
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| Main Authors: | , , , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c380t-bf38b45ac1e8fe29d3f7851adfff0437a4673f1acfc5048aa9b727a5dd05af1f3 |
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| cites | cdi_FETCH-LOGICAL-c380t-bf38b45ac1e8fe29d3f7851adfff0437a4673f1acfc5048aa9b727a5dd05af1f3 |
| container_end_page | 131 |
| container_issue | 3 |
| container_start_page | 129 |
| container_title | IEEE electron device letters |
| container_volume | 24 |
| creator | Chang, S.J. Chen, C.H. Su, Y.K. Sheu, J.K. Lai, W.C. Tsai, J.M. Liu, C.H. Chen, S.C. |
| description | GaN Schottky diodes were built internally inside the GaN green LEDs by using etching and redeposition techniques. By properly selecting the etching areas underneath the bonding pads, one can minimize the optical loss due to the etching process. Although the reverse current and the forward turn-on voltage were both higher for the GaN LED with a Schottky diode, it was found that the internal Schottky diode could significantly increase the electrostatic discharge threshold from 450 to 1300 V. |
| doi_str_mv | 10.1109/LED.2003.809043 |
| format | article |
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By properly selecting the etching areas underneath the bonding pads, one can minimize the optical loss due to the etching process. Although the reverse current and the forward turn-on voltage were both higher for the GaN LED with a Schottky diode, it was found that the internal Schottky diode could significantly increase the electrostatic discharge threshold from 450 to 1300 V.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2003.809043</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Bonding ; Devices ; Electric potential ; Electrostatic discharge ; Electrostatic discharges ; Etching ; Gallium nitride ; Gallium nitrides ; Light emitting diodes ; Optical losses ; Protection ; Quantum well devices ; Schottky diodes ; Threshold voltage ; Voltage</subject><ispartof>IEEE electron device letters, 2003-03, Vol.24 (3), p.129-131</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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Although the reverse current and the forward turn-on voltage were both higher for the GaN LED with a Schottky diode, it was found that the internal Schottky diode could significantly increase the electrostatic discharge threshold from 450 to 1300 V.</description><subject>Bonding</subject><subject>Devices</subject><subject>Electric potential</subject><subject>Electrostatic discharge</subject><subject>Electrostatic discharges</subject><subject>Etching</subject><subject>Gallium nitride</subject><subject>Gallium nitrides</subject><subject>Light emitting diodes</subject><subject>Optical losses</subject><subject>Protection</subject><subject>Quantum well devices</subject><subject>Schottky diodes</subject><subject>Threshold voltage</subject><subject>Voltage</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNqFkTtPwzAUhS0EEuUxM7BYDDClvX4l9ohKgUrlJUCMluPYNKVNSpyC-u9xVCQkBhgsW1ff8T33HoSOCPQJATWYjC76FID1JSjgbAv1iBAyAZGybdSDjJOEEUh30V4IMwDCecZ76H68WDb1hyvw6PECx2frbFvWFc7X2NaLvKzK6hWPqytzm8SDbx5ecOwU8GfZTnFXebTTum3f1rgo68KFA7TjzTy4w-97Hz1fjp6G18nk7mo8PJ8klklok9wzmXNhLHHSO6oK5jMpiCm899F9ZniaMU-M9VYAl8aoPKOZEUUBwnji2T462_wbPb-vXGj1ogzWzeemcvUqaAUklSplKpKnf5JUMkUY5_-D0WGaUojgyS9wVq-aKo6rFaVCCgkdNNhAtqlDaJzXy6ZcmGatCeguMR33qLvE9CaxqDjeKErn3A9NgQpg7AsL9Y9V</recordid><startdate>20030301</startdate><enddate>20030301</enddate><creator>Chang, S.J.</creator><creator>Chen, C.H.</creator><creator>Su, Y.K.</creator><creator>Sheu, J.K.</creator><creator>Lai, W.C.</creator><creator>Tsai, J.M.</creator><creator>Liu, C.H.</creator><creator>Chen, S.C.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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By properly selecting the etching areas underneath the bonding pads, one can minimize the optical loss due to the etching process. Although the reverse current and the forward turn-on voltage were both higher for the GaN LED with a Schottky diode, it was found that the internal Schottky diode could significantly increase the electrostatic discharge threshold from 450 to 1300 V.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2003.809043</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2003-03, Vol.24 (3), p.129-131 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_ieee_primary_1202503 |
| source | IEEE Xplore (Online service) |
| subjects | Bonding Devices Electric potential Electrostatic discharge Electrostatic discharges Etching Gallium nitride Gallium nitrides Light emitting diodes Optical losses Protection Quantum well devices Schottky diodes Threshold voltage Voltage |
| title | Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes |
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