High efficiency 28V class AB InGaP/GaAs HBT MMIC amplifier with integrated bias circuit

InGaP/GaAs HBTs have demonstrated excellent lifetime and linearity performance for 3 to 10 V operation. This is very attractive for infrastructure applications. However, the low voltage is a drawback in this application where 28 V is a common voltage used. In this effort, a high voltage InGaP/GaAs H...

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Bibliographic Details
Main Authors: Wang, N.L., Dunnrowicz, C., Chen, X., Ma, W., Chau, H.F., Sun, X., Chen, Y., Lin, B., Lo, I.L., Huang, C.H., Yang, M.H.T.
Format: Conference Proceeding
Language:English
Subjects:
Circuits
Electrical resistance measurement
Gallium arsenide
Heterojunction bipolar transistors
Linearity
MMICs
Power measurement
Temperature
Thermal resistance
Voltage
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Summary:InGaP/GaAs HBTs have demonstrated excellent lifetime and linearity performance for 3 to 10 V operation. This is very attractive for infrastructure applications. However, the low voltage is a drawback in this application where 28 V is a common voltage used. In this effort, a high voltage InGaP/GaAs HBT is developed for 28 V operation. The safe operation area is carefully designed, allowing the device to function in class A mode. A thermal resistance of 30/spl deg/C/W for a 1 W HBT design is measured using the V/sub be/ method. 4 W CW power with 71% efficiency is measured from this 1 W design, with a junction temperature rise of 49/spl deg/C. The integrated temperature compensated bias circuit provides
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2003.1212470