Implementation of both high-hole and electron mobility in strained Si/strained Si1-yGey on relaxed Si1-xGex (x<y) virtual substrate

High-hole and electron mobility in complementary channels in strained silicon (Si) on top of strained Si/sub 0.4/Ge/sub 0.6/, both grown on a relaxed Si/sub 0.7/Ge/sub 0.3/ virtual substrate is shown for the first time. The buried Si/sub 0.4/Ge/sub 0.6/ serves as a high-mobility p-channel, and the s...

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Bibliographic Details
Published in:IEEE electron device letters 2003-07, Vol.24 (7), p.460-462
Main Authors: Jongwan Jung, Lee, M.L., Shaofeng Yu, Fitzgerald, E.A., Antoniadis, D.A.
Format: Article
Language:English
Subjects:
Capacitive sensors
Charge carrier processes
DH-HEMTs
Electron mobility
Germanium silicon alloys
Length measurement
MOS devices
MOSFETs
Silicon germanium
Vacuum systems
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Summary:High-hole and electron mobility in complementary channels in strained silicon (Si) on top of strained Si/sub 0.4/Ge/sub 0.6/, both grown on a relaxed Si/sub 0.7/Ge/sub 0.3/ virtual substrate is shown for the first time. The buried Si/sub 0.4/Ge/sub 0.6/ serves as a high-mobility p-channel, and the strained-Si cap serves as a high-mobility n-channel. The effective mobility, measured in devices with a 20-μm gate length and 3.8-nm gate oxide, shows about 2.2/spl sim/2.5 and 2.0 times enhancement in hole and electron mobility, respectively, across a wide vertical field range. In addition, it is found that as the Si cap thickness decreased, PMOS transistors exhibited increased mobility especially at medium- and high-hole density in this heterostructure.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2003.814028