Low-energy nitrogen plasmas for 65-nm node oxynitride gate dielectrics: a correlation of plasma characteristics and device parameters

Ultra-thin oxynitride gate dielectrics (EOT 1.1 to 1.2 nm) have been prepared using quasi-remote inductively coupled nitrogen plasmas. A correlation has been established, for the first time, between device characteristics and measurements of the nitrogen plasma characteristics. It is found that redu...

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Bibliographic Details
Main Authors: Kraus, P.A., Ahmed, K., Chua, T.C., Ershov, M., Karbasi, H., Olsen, C.S., Nouri, F., Holland, J., Zhao, R., Miner, G., Lepert, A.
Format: Conference Proceeding
Language:English
Subjects:
Charge carrier processes
Dielectric devices
Dielectric measurements
Electron mobility
Nitrogen
Plasma density
Plasma devices
Plasma measurements
Plasma properties
Time measurement
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Summary:Ultra-thin oxynitride gate dielectrics (EOT 1.1 to 1.2 nm) have been prepared using quasi-remote inductively coupled nitrogen plasmas. A correlation has been established, for the first time, between device characteristics and measurements of the nitrogen plasma characteristics. It is found that reducing the density of high-energy electrons in the plasma results in 5% improved electron and hole low-field mobilities and 100% improved NBTI reliability. These improvements in plasma nitridation technology enable the extension of oxynitride gate dielectrics to the 65-nm technology node specifications.
DOI:10.1109/VLSIT.2003.1221126