The P-SOG filling Shallow Trench Isolation technology for sub-70 nm device

A novel Polysilazane-based inorganic Spin-On-Glass filling Shallow Trench Isolation (P-SOG filling STI) technology is developed for sub-70 nm devices, for the first time. A key processing step of this P-SOG filling STI technology is annealing after a CMP process. The post-CMP P-SOG annealing elimina...

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Bibliographic Details
Main Authors: Jin-Hwa Heo, Soo-Jin Hong, Guk-Hyon Yon, Yu-Gyun Shin, Fujihara, K., U-In Chung, Joo-Tae Moon
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Current measurement
Electric variables
Filling
Isolation technology
Leakage current
Moon
Random access memory
Research and development
Wet etching
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Summary:A novel Polysilazane-based inorganic Spin-On-Glass filling Shallow Trench Isolation (P-SOG filling STI) technology is developed for sub-70 nm devices, for the first time. A key processing step of this P-SOG filling STI technology is annealing after a CMP process. The post-CMP P-SOG annealing eliminates a field oxide recess problem. This technology shows good electrical characteristics compared with a HDP oxide filling STI. The P-SOG filling STI is a promising candidate for the future isolation technology.
DOI:10.1109/VLSIT.2003.1221132