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Localization of electrical failures from the backside of the die: Failure Analysis case studies using infrared emission microscope

We demonstrate how the Infrared Emission Microscope was used to localize defects in standard I/O pins of integrated circuits and how emission images were used to verify electrical fail signatures. The paper also discusses a method that can be used to improve the localization of electrical failures.

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Main Authors: Bailon, M.F., Tarun, A.B., Nery, M., Munoz, J.
Format: Conference Proceeding
Language:English
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creator Bailon, M.F.
Tarun, A.B.
Nery, M.
Munoz, J.
description We demonstrate how the Infrared Emission Microscope was used to localize defects in standard I/O pins of integrated circuits and how emission images were used to verify electrical fail signatures. The paper also discusses a method that can be used to improve the localization of electrical failures.
doi_str_mv 10.1109/IPFA.2003.1222764
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ispartof Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003, 2003, p.193-197
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Atomic force microscopy
Circuit faults
Computer aided software engineering
Electron emission
Failure analysis
Integrated circuit interconnections
Optical microscopy
Scanning electron microscopy
Transistors
Transmission electron microscopy
title Localization of electrical failures from the backside of the die: Failure Analysis case studies using infrared emission microscope
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