Realization and wafer test of InGaAsP/InP DFB laser/monitor OEICs

Wafer-testable distributed feedback (DFB) lasers and monolithically integrated monitor diodes are realized to replace the time consuming and expensive single-chip test procedure in semiconductor laser fabrication process. Laser-end facets and integrated monitor diodes are defined on 1.5- mu m InGaAs...

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Bibliographic Details
Published in:IEEE photonics technology letters 1992-03, Vol.4 (3), p.250-252
Main Authors: Dutting, K., Idler, W., Bouayad-Amine, J., Mayer, H.P., Wunstel, K.
Format: Article
Language:English
Subjects:
Distributed feedback devices
Indium phosphide
Laser feedback
Laser modes
Laser noise
Monitoring
Quantum well lasers
Semiconductor diodes
Semiconductor lasers
Testing
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Summary:Wafer-testable distributed feedback (DFB) lasers and monolithically integrated monitor diodes are realized to replace the time consuming and expensive single-chip test procedure in semiconductor laser fabrication process. Laser-end facets and integrated monitor diodes are defined on 1.5- mu m InGaAsP/InP multiple quantum well (MQW) DFB laser wafers by reactive ion beam etching (RIBE). Using terminal electrical noise (TEN) measurement, the lasers are characterized directly on the wafer with respect to threshold current and single mode operation. Threshold currents down to 10 mA have been achieved for the integrated devices.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.122382