Hydrogenated amorphous silicon thin-film transistor arrays fabricated by digital lithography

A jet-printed digital-lithographic method, in place of conventional photolithography, was used to fabricate 64 × 64 pixel (300 μm pitch) matrix addressing thin-film transistor (TFT) arrays. The average hydrogenated amorphous silicon TFT device within an array had a threshold voltage of /spl sim/3.5...

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Bibliographic Details
Published in:IEEE electron device letters 2003-09, Vol.24 (9), p.577-579
Main Authors: Wong, W.S., Ready, S.E., Jeng-Ping Lu, Street, R.A.
Format: Article
Language:English
Subjects:
Amorphous silicon
Arrays
Biomedical imaging
Devices
Etching
Ink jet printing
Liquid crystal displays
Lithography
Materials processing
Photolithography
Semiconductor devices
Thin film devices
Thin film transistors
Threshold voltage
Transistors
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Summary:A jet-printed digital-lithographic method, in place of conventional photolithography, was used to fabricate 64 × 64 pixel (300 μm pitch) matrix addressing thin-film transistor (TFT) arrays. The average hydrogenated amorphous silicon TFT device within an array had a threshold voltage of /spl sim/3.5 V, carrier mobility of 0.7 cm 2 /V/spl middot/s, subthreshold slope of 0.76 V/decade, and an on/off ratio of 10/sup 8/.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2003.815939