The drain current asymmetry of 130 nm MOSFETs due to extension implant shadowing originated by mechanical angle error in high current implanter

The drain current asymmetry of 130 nm n-MOSFETs due to extension and source/drain ion implantation shadowing at the edge of gate electrode has been investigated. The ion implantation angle error is occurred even the tilt and twist angles are mechanically set as 0 degree. This ion implantation angle...

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Main Authors: Yoneda, K., Niwayama, M.
Format: Conference Proceeding
Language:English
Subjects:
Design methodology
Electrodes
Implants
Ion beams
Ion implantation
Joining processes
MOSFET circuits
Shadow mapping
Wheels
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Niwayama, M.
description The drain current asymmetry of 130 nm n-MOSFETs due to extension and source/drain ion implantation shadowing at the edge of gate electrode has been investigated. The ion implantation angle error is occurred even the tilt and twist angles are mechanically set as 0 degree. This ion implantation angle error is remarkable at periphery area of 200 mm wafer. This angle error originated in wheel design and scanning method of a high current ion implanter. Those are structural limitation of a high current batch type ion implanter. The drain current asymmetry can be dramatically reduced by using 4-step (Tilt/Twist=0/0, 0/90, 0/180, 0/270 deg.) ion implantation for extension implant similar to pocket implant. Therefore, even the low energy, high current ion implantation such as extension and source/drain implant, 4-step ion implantation is indispensable to reduce the drain current asymmetry.
doi_str_mv 10.1109/IWJT.2002.1225190
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fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_1225190</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1225190</ieee_id><sourcerecordid>1225190</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-a7075488b2912c8cb412a1b0806851e56201b88489dd29b18d9f106e52b68dc63</originalsourceid><addsrcrecordid>eNo9kE1qwzAUhAWl0L8coHTzLpBUT7YcaVlCf1JSsqihyyBZL7aKLQfJofUpeuUaGjqbWc18zDB2i3yByPX9-uO1XAjOxQKFkKj5GbvKlUbMuVDZBZul9MknZVpmUl2yn7IhcNH4ANUxRgoDmDR2HQ1xhH4PmHEIHbxt358eywTuSDD0QN8DheT7AL47tGYKpca4_suHGvroax_MQA7sCB1VjQm-Mi2YULcEFGMfYcI1vm7-macaijfsfG_aRLOTX7NyAq9e5pvt83r1sJl7zYe5WfKlzJWyQqOoVGVzFAYtV7xQEkkWgqNVahrunNAWldN75AVJYQvlqiK7Znd_tZ6IdofoOxPH3emy7BdVO2MD</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>The drain current asymmetry of 130 nm MOSFETs due to extension implant shadowing originated by mechanical angle error in high current implanter</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Yoneda, K. ; Niwayama, M.</creator><creatorcontrib>Yoneda, K. ; Niwayama, M.</creatorcontrib><description>The drain current asymmetry of 130 nm n-MOSFETs due to extension and source/drain ion implantation shadowing at the edge of gate electrode has been investigated. The ion implantation angle error is occurred even the tilt and twist angles are mechanically set as 0 degree. This ion implantation angle error is remarkable at periphery area of 200 mm wafer. This angle error originated in wheel design and scanning method of a high current ion implanter. Those are structural limitation of a high current batch type ion implanter. The drain current asymmetry can be dramatically reduced by using 4-step (Tilt/Twist=0/0, 0/90, 0/180, 0/270 deg.) ion implantation for extension implant similar to pocket implant. Therefore, even the low energy, high current ion implantation such as extension and source/drain implant, 4-step ion implantation is indispensable to reduce the drain current asymmetry.</description><identifier>ISBN: 4891140283</identifier><identifier>ISBN: 9784891140281</identifier><identifier>DOI: 10.1109/IWJT.2002.1225190</identifier><language>eng</language><publisher>IEEE</publisher><subject>Design methodology ; Electrodes ; Implants ; Ion beams ; Ion implantation ; Joining processes ; MOSFET circuits ; Shadow mapping ; Wheels</subject><ispartof>Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT, 2002, p.19-22</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1225190$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,777,781,786,787,2052,4036,4037,27906,54901</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1225190$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Yoneda, K.</creatorcontrib><creatorcontrib>Niwayama, M.</creatorcontrib><title>The drain current asymmetry of 130 nm MOSFETs due to extension implant shadowing originated by mechanical angle error in high current implanter</title><title>Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT</title><addtitle>IWJT</addtitle><description>The drain current asymmetry of 130 nm n-MOSFETs due to extension and source/drain ion implantation shadowing at the edge of gate electrode has been investigated. The ion implantation angle error is occurred even the tilt and twist angles are mechanically set as 0 degree. This ion implantation angle error is remarkable at periphery area of 200 mm wafer. This angle error originated in wheel design and scanning method of a high current ion implanter. Those are structural limitation of a high current batch type ion implanter. The drain current asymmetry can be dramatically reduced by using 4-step (Tilt/Twist=0/0, 0/90, 0/180, 0/270 deg.) ion implantation for extension implant similar to pocket implant. Therefore, even the low energy, high current ion implantation such as extension and source/drain implant, 4-step ion implantation is indispensable to reduce the drain current asymmetry.</description><subject>Design methodology</subject><subject>Electrodes</subject><subject>Implants</subject><subject>Ion beams</subject><subject>Ion implantation</subject><subject>Joining processes</subject><subject>MOSFET circuits</subject><subject>Shadow mapping</subject><subject>Wheels</subject><isbn>4891140283</isbn><isbn>9784891140281</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2002</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNo9kE1qwzAUhAWl0L8coHTzLpBUT7YcaVlCf1JSsqihyyBZL7aKLQfJofUpeuUaGjqbWc18zDB2i3yByPX9-uO1XAjOxQKFkKj5GbvKlUbMuVDZBZul9MknZVpmUl2yn7IhcNH4ANUxRgoDmDR2HQ1xhH4PmHEIHbxt358eywTuSDD0QN8DheT7AL47tGYKpca4_suHGvroax_MQA7sCB1VjQm-Mi2YULcEFGMfYcI1vm7-macaijfsfG_aRLOTX7NyAq9e5pvt83r1sJl7zYe5WfKlzJWyQqOoVGVzFAYtV7xQEkkWgqNVahrunNAWldN75AVJYQvlqiK7Znd_tZ6IdofoOxPH3emy7BdVO2MD</recordid><startdate>2002</startdate><enddate>2002</enddate><creator>Yoneda, K.</creator><creator>Niwayama, M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2002</creationdate><title>The drain current asymmetry of 130 nm MOSFETs due to extension implant shadowing originated by mechanical angle error in high current implanter</title><author>Yoneda, K. ; Niwayama, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-a7075488b2912c8cb412a1b0806851e56201b88489dd29b18d9f106e52b68dc63</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Design methodology</topic><topic>Electrodes</topic><topic>Implants</topic><topic>Ion beams</topic><topic>Ion implantation</topic><topic>Joining processes</topic><topic>MOSFET circuits</topic><topic>Shadow mapping</topic><topic>Wheels</topic><toplevel>online_resources</toplevel><creatorcontrib>Yoneda, K.</creatorcontrib><creatorcontrib>Niwayama, M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yoneda, K.</au><au>Niwayama, M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>The drain current asymmetry of 130 nm MOSFETs due to extension implant shadowing originated by mechanical angle error in high current implanter</atitle><btitle>Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT</btitle><stitle>IWJT</stitle><date>2002</date><risdate>2002</risdate><spage>19</spage><epage>22</epage><pages>19-22</pages><isbn>4891140283</isbn><isbn>9784891140281</isbn><abstract>The drain current asymmetry of 130 nm n-MOSFETs due to extension and source/drain ion implantation shadowing at the edge of gate electrode has been investigated. The ion implantation angle error is occurred even the tilt and twist angles are mechanically set as 0 degree. This ion implantation angle error is remarkable at periphery area of 200 mm wafer. This angle error originated in wheel design and scanning method of a high current ion implanter. Those are structural limitation of a high current batch type ion implanter. The drain current asymmetry can be dramatically reduced by using 4-step (Tilt/Twist=0/0, 0/90, 0/180, 0/270 deg.) ion implantation for extension implant similar to pocket implant. Therefore, even the low energy, high current ion implantation such as extension and source/drain implant, 4-step ion implantation is indispensable to reduce the drain current asymmetry.</abstract><pub>IEEE</pub><doi>10.1109/IWJT.2002.1225190</doi><tpages>4</tpages></addata></record>
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subjects Design methodology
Electrodes
Implants
Ion beams
Ion implantation
Joining processes
MOSFET circuits
Shadow mapping
Wheels
title The drain current asymmetry of 130 nm MOSFETs due to extension implant shadowing originated by mechanical angle error in high current implanter
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T18%3A54%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=The%20drain%20current%20asymmetry%20of%20130%20nm%20MOSFETs%20due%20to%20extension%20implant%20shadowing%20originated%20by%20mechanical%20angle%20error%20in%20high%20current%20implanter&rft.btitle=Extended%20Abstracts%20of%20the%20Third%20International%20Workshop%20on%20Junction%20Technology,%202002.%20IWJT&rft.au=Yoneda,%20K.&rft.date=2002&rft.spage=19&rft.epage=22&rft.pages=19-22&rft.isbn=4891140283&rft.isbn_list=9784891140281&rft_id=info:doi/10.1109/IWJT.2002.1225190&rft_dat=%3Cieee_6IE%3E1225190%3C/ieee_6IE%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i90t-a7075488b2912c8cb412a1b0806851e56201b88489dd29b18d9f106e52b68dc63%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1225190&rfr_iscdi=true