A 435 MHz high-gain low-power LNA in 0.35 /spl mu/m SOI CMOS

A low-power, high-gain, fully-differential low noise amplifier (LNA) in 0.35 -/spl mu/m SOI CMOS technology is designed and tested. The LNA is intended for use as the amplification stage in a subsampling receiver at UHF frequency. The measured 46-dB small signal gain, 3-dB noise figure, and 19-mW to...

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Bibliographic Details
Main Authors: Huang, D., Zencir, E., Dogan, N.S., Arvas, E.
Format: Conference Proceeding
Language:English
Subjects:
CMOS technology
Frequency
Gain measurement
Low-noise amplifiers
Noise figure
Noise measurement
Power measurement
Testing
Time measurement
UHF measurements
Online Access:Request full text
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Description
Summary:A low-power, high-gain, fully-differential low noise amplifier (LNA) in 0.35 -/spl mu/m SOI CMOS technology is designed and tested. The LNA is intended for use as the amplification stage in a subsampling receiver at UHF frequency. The measured 46-dB small signal gain, 3-dB noise figure, and 19-mW total power consumption is reported for the first time.
ISSN:0749-6877
2375-5350
DOI:10.1109/UGIM.2003.1225709