Technology-portable analytical model for DSM CMOS inverter transition-time estimation

In this paper, we propose a new analytical model to estimate the transition time of CMOS inverters, taking into account the main effects of deep submicron (DSM) such as velocity saturation and mobility degradation. The relationship between the input and output transitions is discussed and captured b...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on computer-aided design of integrated circuits and systems 2003-09, Vol.22 (9), p.1177-1187
Main Authors: Kabbani, A., Al-Khalili, D., Al-Khalili, A.J.
Format: Article
Language:English
Subjects:
Analytical models
Circuit simulation
Closed-form solution
CMOS
CMOS technology
Computer simulation
Crosstalk
Devices
Distributed memory
Exact solutions
Inverters
Mathematical analysis
Mathematical models
MOSFETs
Predictive models
Semiconductor device modeling
SPICE
Studies
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this paper, we propose a new analytical model to estimate the transition time of CMOS inverters, taking into account the main effects of deep submicron (DSM) such as velocity saturation and mobility degradation. The relationship between the input and output transitions is discussed and captured by a closed-form expression. Also, this model has been formulated to depend only on SPICE parameters that are usually provided with the given technology. In other words, neither presimulated extracted parameters nor fitting parameters are required. Thus, the developed model is technology-portable. The proposed model is validated by comparing its results with Spectre simulation results. To ensure the model's robustness, a wide range of output loading and input transition times have been considered. Also, to ensure the model's portability and accuracy for DSM devices, 0.25, 0.18, and 0.13-/spl mu/m technologies have been used to conduct our comparison. Considering the mentioned technologies, the proposed model achieved less than 10% error when it is compared to Specter level 11 (BSIM3v3) simulation results.
ISSN:0278-0070
1937-4151
DOI:10.1109/TCAD.2003.816215