A Fin-type independent-double-gate NFET

We present, to our knowledge, the first published experimental integration of two independent gates on a FinFET. The devices have symmetric gate oxide physical thicknesses of 8.5 nm, gate lengths ranging from 0.25 /spl mu/m to 5 /spl mu/m, and designed fin thicknesses ranging from 10 nm to 100 nm. I...

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Bibliographic Details
Main Authors: Fried, D.M., Nowak, E.J., Kedzierski, J., Duster, J.S., Komegay, K.T.
Format: Conference Proceeding
Language:English
Subjects:
Circuits
CMOS technology
Dielectrics
Double-gate FETs
Electrodes
Etching
FinFETs
Lithography
Plasma applications
Silicon
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Summary:We present, to our knowledge, the first published experimental integration of two independent gates on a FinFET. The devices have symmetric gate oxide physical thicknesses of 8.5 nm, gate lengths ranging from 0.25 /spl mu/m to 5 /spl mu/m, and designed fin thicknesses ranging from 10 nm to 100 nm. Independent-gate operation is demonstrated by modulating saturated drain current with both front and back gate voltages.
DOI:10.1109/DRC.2003.1226864