A physical compact model of DG MOSFET for mixed-signal circuit applications - part II: Parameter extraction

For pt. see ibid., vol. 50, no. 10, p. 2135 (2003). Based on the physical double-gate MOSFET model described in Part I, we present a systematic parameter extraction methodology that avoids parameter interdependence between different physical effects whenever possible. Several extraction schemes are...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2003-10, Vol.50 (10), p.2144-2153
Main Authors: Gen Pei, Kan, E.C.-C.
Format: Article
Language:English
Subjects:
Charge carrier mobility
Circuit design
Circuits
Drains
Extraction
Mathematical models
Methodology
MOSFETs
Parameter estimation
Reproduction
Semiconductor device modeling
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Summary:For pt. see ibid., vol. 50, no. 10, p. 2135 (2003). Based on the physical double-gate MOSFET model described in Part I, we present a systematic parameter extraction methodology that avoids parameter interdependence between different physical effects whenever possible. Several extraction schemes are compared for precise modeling of small-signal and large-signal characteristics. The physical model and the extraction methodology are verified through the reproduction of the simulated drain current, incremental drain resistance, and transconductance per unit current, which are parameters of particular interest to mixed-signal circuit designs.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2003.817480