Proton and heavy ion upsets in GaAs MESFET devices

Proton and heavy SEU data has been obtained for devices made by several GaAs MESFET manufacturers. Proton energy dependence and proton and heavy ion upset cross sections are reported. Measurements of charge collection from latches designed with various gate widths show that charge collection depths...

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Bibliographic Details
Published in:IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) 1991-12, Vol.38 (6), p.1460-1466
Main Authors: Weatherfold, T.R., Tran, L., Stapor, W.J., Petersen, E.L., Langworthy, J.B., McMorrow, D., Abdel-Kader, W.G., McNulty, P.J.
Format: Article
Language:English
Subjects:
426000 > Engineering-- Components, Electron Devices & Circuits-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
BARYON REACTIONS
BiCMOS integrated circuits
CHARGED-PARTICLE REACTIONS
CROSS SECTIONS
DESIGN
ELECTRODES
ELECTRONIC CIRCUITS
ENERGY DEPENDENCE
ENGINEERING
FETs
Foundries
Gallium arsenide
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HADRON REACTIONS
HEAVY ION REACTIONS
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
Laboratories
Logic functions
MESFET integrated circuits
Neutrons
NUCLEAR REACTIONS
NUCLEON REACTIONS
PNICTIDES 440200 > Radiation Effects on Instrument Components, Instruments, or Electronic Systems
PROTON REACTIONS
Protons
RADIATION EFFECTS
Random access memory
VARIATIONS
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Summary:Proton and heavy SEU data has been obtained for devices made by several GaAs MESFET manufacturers. Proton energy dependence and proton and heavy ion upset cross sections are reported. Measurements of charge collection from latches designed with various gate widths show that charge collection depths appear deeper than the 1 mu m depth expected. Critical charge does not scale linearly with area. Proton upset cross sections are reduced with increased device width.< >
ISSN:0018-9499
1558-1578
DOI:10.1109/23.124131