SGOI thinning and uniformity improvement using a fluoride GCIB process

In this paper, we investigates the first time use of a non-agglomerate forming, fluoride gas cluster ion beam rapid etch and smooth process on SiGe transfer layers for SGOI substrate fabrication. Atomic force microscopy and spectroscopic ellipsometry were employed to determine surface morphology and...

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Bibliographic Details
Main Authors: Chu, Allen, Skinner, Hautala, Tetreault, MacCrimmon, Santeufemio, Degenkolb, Fenner
Format: Conference Proceeding
Language:English
Subjects:
Atomic force microscopy
Ellipsometry
Germanium alloys
Ion beam applications
Semiconductor device fabrication
Semiconductor materials
Semiconductor-insulator interfaces
Silicon alloys
Sputter etching
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Summary:In this paper, we investigates the first time use of a non-agglomerate forming, fluoride gas cluster ion beam rapid etch and smooth process on SiGe transfer layers for SGOI substrate fabrication. Atomic force microscopy and spectroscopic ellipsometry were employed to determine surface morphology and thickness changes.
ISSN:1078-621X
2577-2295
DOI:10.1109/SOI.2003.1242891