Metamorphic AlSb/InAs HEMT for low-power, high-speed electronics

Metamorphic high electron mobility transistors (HEMT) on GaAs substrates, with InAs channels and 0.1-/spl mu/m metal gates, have demonstrated 5 to 10 times lower power dissipation for equivalent f/sub T/ over conventional InAlAs/InGaAs lattice-matched HEMTs and MHEMTs. Our AlSb/InAs HEMT's exhi...

Full description

Saved in:
Bibliographic Details
Main Authors: Tsai, R., Barsky, M., Boos, J.B., Bennett, B.R., Lee, J., Papanicolaou, N.A., Magno, R., Namba, C., Liu, P.H., Park, D., Grundbacher, R., Gutierrez, A.
Format: Conference Proceeding
Language:English
Subjects:
Gallium arsenide
HEMTs
High-speed electronics
Indium compounds
Indium gallium arsenide
Low-noise amplifiers
mHEMTs
MMICs
MODFETs
Power dissipation
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Metamorphic high electron mobility transistors (HEMT) on GaAs substrates, with InAs channels and 0.1-/spl mu/m metal gates, have demonstrated 5 to 10 times lower power dissipation for equivalent f/sub T/ over conventional InAlAs/InGaAs lattice-matched HEMTs and MHEMTs. Our AlSb/InAs HEMT's exhibit transconductances higher than 1S/mm at drain biases as low as 0.2 V, while maintaining measured f/sub T/ results greater than 200 GHz and f/sub MAX/ results approaching 200 GHz. We have achieved low power X-band MMIC low-noise amplifiers with greater than 7 dB/stage peak gain from 12-14 GHz and 6 mW/stage DC power dissipation.
ISSN:1064-7775
2379-5638
DOI:10.1109/GAAS.2003.1252415