Proposal of quantum well gate insulating (QWGI) structures for band offset engineering from first-principles calculations

The objective of this study is to provide a method to make the conduction band (CB) offset large in order to utilize STO-related materials as a gate insulator: to propose a new nanoscaled quantum-well structure of a gate insulator, using STO-related materials with large /spl epsiv/.

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Bibliographic Details
Main Authors: Schimizu, T., Yamaguchi, T.
Format: Conference Proceeding
Language:English
Subjects:
Conducting materials
Dielectric constant
Dielectrics and electrical insulation
Energy consumption
High K dielectric materials
High-K gate dielectrics
Lattices
Molecular beam epitaxial growth
Photonic band gap
Proposals
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Description
Summary:The objective of this study is to provide a method to make the conduction band (CB) offset large in order to utilize STO-related materials as a gate insulator: to propose a new nanoscaled quantum-well structure of a gate insulator, using STO-related materials with large /spl epsiv/.
DOI:10.1109/IWGI.2003.159190