A novel short-gate carbon nanotube thin film transistors

In this paper, a novel short-gate CNTFET with top-gate structure is fabricated. The traditional top-gate CNTFET shows the ambipolar behaviour while the novel CNTFET shows only the p-type FET characteristics for the same process parameters. The transport model and related band diagram are proposed to...

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Bibliographic Details
Main Authors: Jeng-Hua Wei, Hung-Hsiang Wang, Hsin-Hui Chen, Ming-Jiunn Lai, Ming-Jer Kao, Ming-Jinn Tsai
Format: Conference Proceeding
Language:English
Subjects:
Carbon nanotubes
Charge carrier processes
Electrons
FETs
Insulation
Intrusion detection
Protection
Silicon
Temperature
Voltage
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Summary:In this paper, a novel short-gate CNTFET with top-gate structure is fabricated. The traditional top-gate CNTFET shows the ambipolar behaviour while the novel CNTFET shows only the p-type FET characteristics for the same process parameters. The transport model and related band diagram are proposed to explain these differences.
ISSN:1524-766X
2690-8174
DOI:10.1109/VTSA.2003.1252547