A novel short-gate carbon nanotube thin film transistors

In this paper, a novel short-gate CNTFET with top-gate structure is fabricated. The traditional top-gate CNTFET shows the ambipolar behaviour while the novel CNTFET shows only the p-type FET characteristics for the same process parameters. The transport model and related band diagram are proposed to...

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Main Authors: Jeng-Hua Wei, Hung-Hsiang Wang, Hsin-Hui Chen, Ming-Jiunn Lai, Ming-Jer Kao, Ming-Jinn Tsai
Format: Conference Proceeding
Language:English
Subjects:
Carbon nanotubes
Charge carrier processes
Electrons
FETs
Insulation
Intrusion detection
Protection
Silicon
Temperature
Voltage
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creator Jeng-Hua Wei
Hung-Hsiang Wang
Hsin-Hui Chen
Ming-Jiunn Lai
Ming-Jer Kao
Ming-Jinn Tsai
description In this paper, a novel short-gate CNTFET with top-gate structure is fabricated. The traditional top-gate CNTFET shows the ambipolar behaviour while the novel CNTFET shows only the p-type FET characteristics for the same process parameters. The transport model and related band diagram are proposed to explain these differences.
doi_str_mv 10.1109/VTSA.2003.1252547
format conference_proceeding
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ispartof 2003 International Symposium on VLSI Technology, Systems and Applications. Proceedings of Technical Papers. (IEEE Cat. No.03TH8672), 2003, p.42-45
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Carbon nanotubes
Charge carrier processes
Electrons
FETs
Insulation
Intrusion detection
Protection
Silicon
Temperature
Voltage
title A novel short-gate carbon nanotube thin film transistors
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