Molecular n-type dopant implants

The use of dimer As 2 + or P 2 + ions at ultra-low energies can lead to substantial throughput advantages compared with the use of monomer As + or P + ions. Here we investigate the differences in the as-implanted damage from dimer and monomer ions using high resolution Rutherford backscattering and...

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Main Authors: Agarwal, A., Stevenson, B.A., Ameen, M.S., Freer, B.S., Poate, J.M.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Atomic layer deposition
Atomic measurements
Backscatter
Electrical resistance measurement
Energy resolution
Implants
Ion implantation
Spectroscopy
Throughput
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creator Agarwal, A.
Stevenson, B.A.
Ameen, M.S.
Freer, B.S.
Poate, J.M.
description The use of dimer As 2 + or P 2 + ions at ultra-low energies can lead to substantial throughput advantages compared with the use of monomer As + or P + ions. Here we investigate the differences in the as-implanted damage from dimer and monomer ions using high resolution Rutherford backscattering and Thermawave measurements. Use of dimer ions leads to more damage as revealed by the formation of a thicker amorphous layer than from monomer ions. The amorphization threshold for 3-keV As + is found to be between 0.5 and 1×10 14 cm -2 . Using As 2 + , however, the amorphization threshold is reduced to an atomic arsenic dose less than 0.5×10 14 cm -2 . Despite these rather significant differences in the as-implanted damage from monomers and dimers, the diffusion and dopant activation of arsenic are found to be identical following spike-annealing for ultra-shallow junction formation.
doi_str_mv 10.1109/IIT.2002.1257953
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subjects Annealing
Atomic layer deposition
Atomic measurements
Backscatter
Electrical resistance measurement
Energy resolution
Implants
Ion implantation
Spectroscopy
Throughput
title Molecular n-type dopant implants
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