Introducing the ORion II NV7392 flat panel ion doping system

The next generation of the ORion flat panel ion doping system has been developed in order to meet evolving industry requirements for implantation into substrates that now exceed one square meter in area. The ORion II ion doping system scales-up both the linear ribbon-beam ion source, and the high-th...

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Bibliographic Details
Main Authors: Sato, M., Maruyama, M., Sakanishi, H., Isobe, E., Yoshida, K., Nishihara, T., Ochi, T., Inada, K., Murata, H., Brailove, A., Tanaka, T.
Format: Conference Proceeding
Language:English
Subjects:
Current density
Doping
Ion beams
Ion sources
Manufacturing
Particle beams
Substrates
Thin film transistors
Throughput
Toy industry
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Summary:The next generation of the ORion flat panel ion doping system has been developed in order to meet evolving industry requirements for implantation into substrates that now exceed one square meter in area. The ORion II ion doping system scales-up both the linear ribbon-beam ion source, and the high-throughput substrate handling architecture of the first-generation ORion machine. The ORion II is capable of processing of substrates up to 1000×1200 mm, and can deliver linear beam current densities of 700 particle μA/cm of phosphorous and 300 particle μA/cm of boron. In addition to describing the machine architecture, we present data on the beam current uniformity, implant It,, throughput, beam current dynamic range and process-switching performance.
DOI:10.1109/IIT.2002.1258020