Dopant ion induced electron emission yield from IC target materials

While ion induced electrons have a well-documented physical application in various areas, they can be a nuisance in a lot of others such as the absolute current measuring devices of ion implanters. Furthermore, electrons released from insulated sections of device wafers bombarded by positive dopant...

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Bibliographic Details
Main Authors: Arrale, A.M., Zhao, Z.Y., Cherekdjian, S.
Format: Conference Proceeding
Language:English
Subjects:
Atomic measurements
Crystalline materials
Current measurement
Electric breakdown
Electron emission
Implants
Insulation
Projectiles
Silicon
Surface charging
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Summary:While ion induced electrons have a well-documented physical application in various areas, they can be a nuisance in a lot of others such as the absolute current measuring devices of ion implanters. Furthermore, electrons released from insulated sections of device wafers bombarded by positive dopant ions can enhance the positive charge buildup thus causing catastrophic breakdowns of gate oxides. Therefore, it is important to know the electron emission yield of those materials so that a proper means of suppressing them or compensating the induced charges is performed. We present the electron emission yield as a function of energy from single crystal silicon, polysilicon and SiO 2 targets induced by dopant (B, P, As) ions that are commonly used in the silicon IC industry. The ion induced electron emission yield results from these targets will be compared and discussed. The electronic stopping powers and the corresponding material parameters are also calculated.
DOI:10.1109/IIT.2002.1258070