A new theoretical design optimization of multiple quantum-well electroabsorption modulator

A numerical model for computing electroabsorption in InAlAs/InGaAs multiple quantum well based on a matrix method is presented. The model is made simple to make it suitable as fast-design-tool for multiple quantum well electroabsorption modulators. A complete and self-consistent model of the quantum...

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Bibliographic Details
Main Authors: Sheikhi, M.H., Emamghoreishi, S.A., Javadpoor, S., Moravvej-Farshi, M.K.
Format: Conference Proceeding
Language:English
Subjects:
Design optimization
Excitons
Indium compounds
Indium gallium arsenide
Numerical models
Potential well
Quantum computing
Quantum well devices
Schrodinger equation
Stark effect
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Summary:A numerical model for computing electroabsorption in InAlAs/InGaAs multiple quantum well based on a matrix method is presented. The model is made simple to make it suitable as fast-design-tool for multiple quantum well electroabsorption modulators. A complete and self-consistent model of the quantum confined Stark effect (QCSE) is also presented. Scalar Schrodinger equation is solved in the presence of static electric field. The position of heavy hole (hh) exciton peak and its shift (stark shift) is calculated numerically, considering the effect of the number, width and height of quantum wells. Coupling effect between the quantum wells in the calculations was considered for the first time.
DOI:10.1109/NUSOD.2003.1259031