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A 667-Mb/s operating digital DLL architecture for 512-Mb DDR SDRAM
This paper describes an all-digital delay-locked loop (DLL) architecture for over 667 Mb/s operating double-data-rate (DDR) type SDRAMs, which suppresses skews and jitters. Two novel replica adjusting techniques are introduced, in which timing skews caused by the clock input and data output circuits...
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Published in: | IEEE journal of solid-state circuits 2004-01, Vol.39 (1), p.194-206 |
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container_end_page | 206 |
container_issue | 1 |
container_start_page | 194 |
container_title | IEEE journal of solid-state circuits |
container_volume | 39 |
creator | Hamamoto, T. Furutani, K. Kubo, T. Kawasaki, S. Iga, H. Kono, T. Konishi, Y. Yoshihara, T. |
description | This paper describes an all-digital delay-locked loop (DLL) architecture for over 667 Mb/s operating double-data-rate (DDR) type SDRAMs, which suppresses skews and jitters. Two novel replica adjusting techniques are introduced, in which timing skews caused by the clock input and data output circuits are reduced by a hierarchical phase comparing architecture and a replica check method with slow tester. Further, an improved phase interpolating method suppresses jitters caused by a boundary of the fine and coarse delays. A 512-Mb test device is fabricated using a 0.13-/spl mu/m DRAM process technology, in which skew and jitter suppressed 667-Mb/s (333-MHz) DDR operation has been verified. |
doi_str_mv | 10.1109/JSSC.2003.820851 |
format | article |
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Two novel replica adjusting techniques are introduced, in which timing skews caused by the clock input and data output circuits are reduced by a hierarchical phase comparing architecture and a replica check method with slow tester. Further, an improved phase interpolating method suppresses jitters caused by a boundary of the fine and coarse delays. A 512-Mb test device is fabricated using a 0.13-/spl mu/m DRAM process technology, in which skew and jitter suppressed 667-Mb/s (333-MHz) DDR operation has been verified.</description><subject>Architecture</subject><subject>Boundaries</subject><subject>Circuit testing</subject><subject>Circuits</subject><subject>Clocks</subject><subject>Delay</subject><subject>Delay lines</subject><subject>Digital</subject><subject>DRAM chips</subject><subject>Dynamic link libraries</subject><subject>Frequency</subject><subject>High-speed electronics</subject><subject>Jitter</subject><subject>Random access memory</subject><subject>SDRAM</subject><subject>Timing</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNp9kM9LwzAUx4MoOKd3wUvwoKdueUnTJMe5-ZMOYVPwFtI0mR11nUl38L-3ZYLgwdPj8T7fL7wPQudARgBEjZ-Wy-mIEsJGkhLJ4QANgHOZgGBvh2hACMhEdfdjdBLjulvTVMIA3UxwlolkXowjbrYumLbarHBZrarW1HiW59gE-161zra74LBvAuZAOx7PZgu8nC0m81N05E0d3dnPHKLXu9uX6UOSP98_Tid5YhmHNrGp5cx4K0VJhTLKUEu5UNaTwvtMyUIVhnhQnJdWpEISn1JOeMm4UkpQxoboet-7Dc3nzsVWf1TRuro2G9fsopYqo2kmM9GRV_-SVIIUQvaVl3_AdbMLm-4LrSgwnoLqIbKHbGhiDM7rbag-TPjSQHTvXvfude9e7913kYt9pHLO_eI0A0aAfQNW-Hqr</recordid><startdate>200401</startdate><enddate>200401</enddate><creator>Hamamoto, T.</creator><creator>Furutani, K.</creator><creator>Kubo, T.</creator><creator>Kawasaki, S.</creator><creator>Iga, H.</creator><creator>Kono, T.</creator><creator>Konishi, Y.</creator><creator>Yoshihara, T.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Two novel replica adjusting techniques are introduced, in which timing skews caused by the clock input and data output circuits are reduced by a hierarchical phase comparing architecture and a replica check method with slow tester. Further, an improved phase interpolating method suppresses jitters caused by a boundary of the fine and coarse delays. A 512-Mb test device is fabricated using a 0.13-/spl mu/m DRAM process technology, in which skew and jitter suppressed 667-Mb/s (333-MHz) DDR operation has been verified.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JSSC.2003.820851</doi><tpages>13</tpages></addata></record> |
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issn | 0018-9200 1558-173X |
language | eng |
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source | IEEE Electronic Library (IEL) Journals |
subjects | Architecture Boundaries Circuit testing Circuits Clocks Delay Delay lines Digital DRAM chips Dynamic link libraries Frequency High-speed electronics Jitter Random access memory SDRAM Timing |
title | A 667-Mb/s operating digital DLL architecture for 512-Mb DDR SDRAM |
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