Electrical performance and reliability of tunnel magnetoresistance heads for 100-Gb/in/sup 2/ application

Tunnel magnetoresistance (TuMR) heads are attractive candidates for future high-density recording. To achieve the high areal density, it is necessary for TuMR heads to get lower resistance and higher delta R/R film. A low resistance and high delta R/R tunneling junction film has been developed and u...

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Bibliographic Details
Published in:IEEE transactions on magnetics 2004-01, Vol.40 (1), p.176-181
Main Authors: Kuwashima, T., Fukuda, K., Kiyono, H., Sato, K., Kagami, T., Saruki, S., Uesugi, T., Kasahara, N., Ohta, N., Nagai, K., Hachisuka, N., Takahashi, N., Naoe, M., Miura, S., Barada, K., Kanaya, T., Inage, K., Kobayashi, A.
Format: Article
Language:English
Subjects:
Electric resistance
Giant magnetoresistance
Magnetic heads
Magnetic noise
Magnetic recording
Magnetic tunneling
Perpendicular magnetic recording
Production
Signal to noise ratio
Tunneling magnetoresistance
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Summary:Tunnel magnetoresistance (TuMR) heads are attractive candidates for future high-density recording. To achieve the high areal density, it is necessary for TuMR heads to get lower resistance and higher delta R/R film. A low resistance and high delta R/R tunneling junction film has been developed and used for this study. The resistance area product and delta R/R are 3 /spl Omega//spl middot//spl mu/m/sup 2/ and 18%, respectively. Reliability that includes lifetime was also studied. We have found TuMR heads can be a promising candidate for 100 Gb/in/sup 2/ application.
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2003.821203