A 6 V embedded 90 nm silicon nanocrystal nonvolatile memory

The first functional 6 V, 4 Mb silicon nanocrystal based nonvolatile memory arrays using conventional 90 nm and 0.25 /spl mu/m process technologies have been produced. The technology can be programmed and erased using conventional techniques in floating gate memories and can substantially reduce the...

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Main Authors: Muralidhar, R., Steimle, R.F., Sadd, M., Rao, R., Swift, C.T., Prinz, E.J., Yater, J., Grieve, L., Harber, K., Hradsky, B., Straub, S., Acred, B., Paulson, W., Chen, W., Parker, L., Anderson, S.G.H., Rossow, M., Merchant, T., Paransky, M., Huynh, T., Hadad, D., Ko-Min Chang, White, B.E.
Format: Conference Proceeding
Language:English
Subjects:
CMOS process
CMOS technology
Dielectrics
Human computer interaction
Nanocrystals
Nonvolatile memory
Silicon
SONOS devices
Tunneling
Voltage
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Summary:The first functional 6 V, 4 Mb silicon nanocrystal based nonvolatile memory arrays using conventional 90 nm and 0.25 /spl mu/m process technologies have been produced. The technology can be programmed and erased using conventional techniques in floating gate memories and can substantially reduce the cost of embedded flash at the 90 nm node and beyond.
DOI:10.1109/IEDM.2003.1269353