A novel SONOS structure of SiO/sub 2//SiN/Al/sub 2/O/sub 3/ with TaN metal gate for multi-giga bit flash memories

A novel SONOS structure of SiO/sub 2//SiN/Al/sub 2/O/sub 3/ (SANOS) with TaN metal gate is for the first time proposed for the next generation non-volatile memory technology. When TaN metal gate is applied for the SANOS instead of commonly used n+ poly-Si, the unwanted backward Fowler-Nordheim tunne...

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Bibliographic Details
Main Authors: Chang Hyun Lee, Kyung In Choi, Myoung Kwan Cho, Yun Heub Song, Kyu Charn Park, Kinam Kim
Format: Conference Proceeding
Language:English
Subjects:
Electrons
High K dielectric materials
High-K gate dielectrics
Research and development
Silicon compounds
SONOS devices
Thermal resistance
Tunneling
Virtual manufacturing
Voltage
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Summary:A novel SONOS structure of SiO/sub 2//SiN/Al/sub 2/O/sub 3/ (SANOS) with TaN metal gate is for the first time proposed for the next generation non-volatile memory technology. When TaN metal gate is applied for the SANOS instead of commonly used n+ poly-Si, the unwanted backward Fowler-Nordheim tunneling current of electrons through the top oxide is significantly suppressed owing to its higher work function and better compatibility with high k dielectrics. As a result, the program/erase speed is significantly improved and the saturation level of erase V/sub TH/ can be obtained to be a negative voltage of -3.5V.
DOI:10.1109/IEDM.2003.1269356