BiCMOS opto-electronic reception system for application in high-frequencies

Two opto-electronics integrated circuits (OEIC) are presented. CMOS transimpedance amplifier (TIA) structures based on the common-gate topology, using negative feedback with the integration of a silicon photodiode, are discussed. Simulations were performed using BSIM3v3, modified BSIM3v3, and EKV mo...

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Bibliographic Details
Main Authors: Martinez-Castillo, J., Diaz-Sanchez, A., Torres-Jacome, A., Murphy-Arteaga, R.S., Finol, J.L.
Format: Conference Proceeding
Language:English
Subjects:
BiCMOS integrated circuits
Circuit simulation
Circuit topology
Gain
Negative feedback
Optoelectronic devices
Photodiodes
Scattering parameters
Semiconductor device modeling
Silicon
Online Access:Request full text
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Summary:Two opto-electronics integrated circuits (OEIC) are presented. CMOS transimpedance amplifier (TIA) structures based on the common-gate topology, using negative feedback with the integration of a silicon photodiode, are discussed. Simulations were performed using BSIM3v3, modified BSIM3v3, and EKV models for high-frequency applications. Experimental and simulation results were performed for a 0.8 /spl mu/m Si BiCMOS AMS process, using HSPICE and CADENCE simulators. Experimental results, obtained from S-parameters, show a transimpedance gain of 40 dB and a bandwidth of 1.9 GHz.
DOI:10.1109/ICECC.2004.1269575