Degradation and recovery of SiGe HBTs following radiation and hot-carrier stressing

Device degradation can arise though a variety of stress conditions and mechanisms. Here we focus on SiGe HBTs and effects of /spl gamma/-radiation and hot-carrier stress on the DC devices characteristics, and subsequent annealing following the stress. Hot-carriers electrical stressing was performed...

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Bibliographic Details
Main Authors: Sheng, S.R., McAlister, S.P., McCaffrey, J.P., Kovacic, S.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Degradation
Diodes
Germanium silicon alloys
Heterojunction bipolar transistors
Hot carriers
Silicon germanium
Substrates
Temperature
Thermal stresses
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Summary:Device degradation can arise though a variety of stress conditions and mechanisms. Here we focus on SiGe HBTs and effects of /spl gamma/-radiation and hot-carrier stress on the DC devices characteristics, and subsequent annealing following the stress. Hot-carriers electrical stressing was performed at room temperature by applying a constant reverse-bias voltage across the BE junction, with the collector and substrate open. The radiation and hot-carrier induced changes were followed in time during annealing at room and elevated temperature.
DOI:10.1109/ISDRS.2003.1271973