Control of emission wavelength of InAs quantum dots grown by various growth techniques

The emission wavelength of InAs-QDs on GaAs substrates are controlled by using five different growth techniques: (a) QD1 sample was grown in a pure GaAs matrix. (b) QD2 sample was covered with In/sub 0.13/Ga/sub 0.87/As on QD1 sample. (c) QD3 sample was grown by In interruption during QD growth in a...

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Bibliographic Details
Main Authors: Sung Ui Hong, Jin Soo Kim, Jin Hong Lee, Ho-Sang Kwack, Won Seok Han, Dae Kon Oh
Format: Conference Proceeding
Language:English
Subjects:
Gallium arsenide
Indium gallium arsenide
Optical control
Quantum dots
Shape control
Size control
Stimulated emission
Temperature control
Temperature measurement
US Department of Transportation
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Summary:The emission wavelength of InAs-QDs on GaAs substrates are controlled by using five different growth techniques: (a) QD1 sample was grown in a pure GaAs matrix. (b) QD2 sample was covered with In/sub 0.13/Ga/sub 0.87/As on QD1 sample. (c) QD3 sample was grown by In interruption during QD growth in a pure GaAs matrix, (d) QD4 sample was covered with In/sub 0.13/Ga/sub 0.87/As SRL on QD3 sample and (e) QD5 sample was covered with InAs/GaAs 10 period on QD3 sample. Schematic of the five type samples are illustrated and In interruption for InAs-QDs, PL spectra of five InAs-QDs samples measured at room temperature are studied.
DOI:10.1109/ISDRS.2003.1272071