Prospects of III-V quantum LSIs based on hexagonal BDD approach

This paper discusses present status and prospects of the novel ultra-low power III-V semiconductor quantum LSI (Q-LSI) technology based on a hexagonal BDD quantum circuit approach. Basic concept, design, examples of fabricated circuits and approach for higher density integration were discussed. As a...

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Bibliographic Details
Main Authors: Kasai, S., Sato, T., Hasegawa, H.
Format: Conference Proceeding
Language:English
Subjects:
Binary decision diagrams
Circuits
Electrons
Energy consumption
III-V semiconductor materials
Large scale integration
Nanowires
Signal processing
Transceivers
Wire
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Summary:This paper discusses present status and prospects of the novel ultra-low power III-V semiconductor quantum LSI (Q-LSI) technology based on a hexagonal BDD quantum circuit approach. Basic concept, design, examples of fabricated circuits and approach for higher density integration were discussed. As an application of such Q-LSI, an ultra small and ultra-low power consumption chip (IQC) is proposed where quantum signal processors, memories, various sensors, transceivers etc are integrated. In actual devices III-V nanowires were controlled Schottky wrap gates (WPG). Designs of WPG-based quantum wire (QWR) and single electron (SE) -type node devices was also shown.
DOI:10.1109/ISDRS.2003.1272204