Improving BiCMOS technologies using BJT parametric mismatch characterisation

Why and how can parametric mismatch studies help to improve IC-technologies? After an introduction on the importance of parametric mismatch for performance and yield of mixed-signal as well as digital technologies, the basic terminology and techniques for BJT mismatch fluctuation assessment are revi...

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Main Author: Tuinhout
Format: Conference Proceeding
Language:English
Subjects:
BiCMOS integrated circuits
Bipolar transistors
Circuit optimization
Yield estimation
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description Why and how can parametric mismatch studies help to improve IC-technologies? After an introduction on the importance of parametric mismatch for performance and yield of mixed-signal as well as digital technologies, the basic terminology and techniques for BJT mismatch fluctuation assessment are reviewed. Two examples are discussed to demonstrate how parametric mismatch fluctuation studies help to improve better device architecture of poly-emitter BJTs. The ensuing process refinements result in better circuit functionality as well as yield improvements.
doi_str_mv 10.1109/BIPOL.2003.1274959
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ispartof 2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440), 2003, p.163-170
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subjects BiCMOS integrated circuits
Bipolar transistors
Circuit optimization
Yield estimation
title Improving BiCMOS technologies using BJT parametric mismatch characterisation
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