Excitation fluence dependence of THz-radiation from femtosecond-laser irradiated InAs under magnetic field

The excitation fluence and magnetic field dependence of THz-radiation power from InAs is investigated. It is found that there are two THz-radiation mechanisms for the femtosecond-laser-irradiated InAs depending on the excitation fluence.

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Bibliographic Details
Main Authors: Takahashi, H., Quema, A., Yoshioka, R., Ono, S., Sarukura, N.
Format: Conference Proceeding
Language:English
Subjects:
Acceleration
Charge carrier processes
Electron emission
Electron optics
Intrusion detection
Laser excitation
Magnetic fields
Optical pulses
Stimulated emission
Ultrafast optics
Online Access:Request full text
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Description
Summary:The excitation fluence and magnetic field dependence of THz-radiation power from InAs is investigated. It is found that there are two THz-radiation mechanisms for the femtosecond-laser-irradiated InAs depending on the excitation fluence.
DOI:10.1109/CLEOPR.2003.1276964