Frequency dependence of the second derivative of the currant-voltage characteristic of the heterostructure SnO/sub 2/-Si at the gas adsorption [currant read as current]

The opportunity of use nanostructural heterostructure n-SnO/sub 2/(Ni)/p-Si as a gas sensitivity element is investigated. The second derivative of the current-voltage characteristic of the heterostructure under influence of changes of gas environment and temperature were studied.

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Bibliographic Details
Main Authors: Il'chenko, V.V., Kravchenko, A.I., Telega, V.V., Chehun, V.P., Gaskov, A.M., Grinchenko, V.T.
Format: Conference Proceeding
Language:English
Subjects:
Current measurement
Frequency dependence
Frequency measurement
Frequency modulation
Semiconductor diodes
Semiconductor thin films
Sensor phenomena and characterization
Signal analysis
Sputtering
Voltage
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Description
Summary:The opportunity of use nanostructural heterostructure n-SnO/sub 2/(Ni)/p-Si as a gas sensitivity element is investigated. The second derivative of the current-voltage characteristic of the heterostructure under influence of changes of gas environment and temperature were studied.
DOI:10.1109/ICSENS.2003.1278914