Piece-wise linear approximation of MOS nonlinear junction capacitance in high-frequency class E amplifier design

This work presents a detailed analysis of the high-frequency class E amplifier realized using MOS transistor with particular attention on the effects of the nonlinear junction capacitance in the drain region. To enable analytical analysis and for easy of circuit design, the junction capacitance is a...

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Bibliographic Details
Main Authors: Ma, S.W., Hei Wong, Ho, C.K.
Format: Conference Proceeding
Language:English
Subjects:
High power amplifiers
MOS devices
MOSFETs
Parasitic capacitance
Piecewise linear techniques
Power amplifiers
Power generation
Switches
Voltage
Wireless LAN
Online Access:Request full text
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Summary:This work presents a detailed analysis of the high-frequency class E amplifier realized using MOS transistor with particular attention on the effects of the nonlinear junction capacitance in the drain region. To enable analytical analysis and for easy of circuit design, the junction capacitance is approximated using piece-wise linear functions. Results show that this treatment is accurate enough and the amplifier characteristics calculated with the newly developed design formulae agree very well with those of the Pspice simulation.
DOI:10.1109/EDSSC.2003.1283521