50-GHz SiGe HBT distributed amplifiers employing constant-k and m-derived filter sections

This paper describes two single-ended three-stage SiGe HBT distributed amplifiers employing constant-k filter sections, m-derived filter sections, and a metal or a deep-trench ground plane in the artificial transmission lines. The distributed amplifiers exhibit a measured passband of 100 MHz-50 GHz;...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2004-05, Vol.52 (5), p.1573-1579
Main Authors: Aguirre, J., Plett, C.
Format: Article
Language:English
Subjects:
Distributed amplifiers
Filters
Germanium silicon alloys
Heterojunction bipolar transistors
Passband
Power measurement
Power transmission lines
Silicon germanium
Size measurement
Transmission line measurements
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper describes two single-ended three-stage SiGe HBT distributed amplifiers employing constant-k filter sections, m-derived filter sections, and a metal or a deep-trench ground plane in the artificial transmission lines. The distributed amplifiers exhibit a measured passband of 100 MHz-50 GHz; they have a small die size (1.0/spl times/1.1 mm/sup 2/) and low power consumption (125 mW). The measured results demonstrate that distributed amplifiers in SiGe can be competitive with those in III-V processes.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2004.827049