Simulation of the exclusion/extraction InSb MOSFETs

A methodology for simulation of InSb MOSFETs in standard drift-diffusion simulators is presented. Due to its low bandgap and high mobility, InSb shows promise as a material for extremely high frequency active devices operating at very low voltages. Material complexities, such as non-parabolicity, de...

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Bibliographic Details
Main Authors: Sijercic, E., Mueller, K., Pejcinovic, B.
Format: Conference Proceeding
Language:English
Subjects:
Computational modeling
Computer simulation
Frequency
III-V semiconductor materials
Leakage current
Low voltage
MOSFETs
Photonic band gap
Semiconductor device doping
Temperature
Online Access:Request full text
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Summary:A methodology for simulation of InSb MOSFETs in standard drift-diffusion simulators is presented. Due to its low bandgap and high mobility, InSb shows promise as a material for extremely high frequency active devices operating at very low voltages. Material complexities, such as non-parabolicity, degeneracy, mobility and Auger recombination/generation are explained, and physics based models are developed. This methodology is then applied to the examination of the leakage current, transconductance and maximum unity current gain frequency of the exclusion/extraction MOSFET. Its scaling properties down to 0.15 /spl mu/m are also analyzed.
DOI:10.1109/WMED.2004.1297354