Longitudinal current modulated light reflectance spectroscopy of semiconductor laser heterostructures

In this work we introduce new effective method of modulation spectroscopy for investigation of high power semiconductor laser heterostructures and compare it with traditional photoreflectance and photoluminescence methods. We present experimental results for AlGaAs/GaAs semiconductor laser heterostr...

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Bibliographic Details
Main Authors: Ryabushkin, O.A., Romanyuk, A.Y., Chernikov, M.A., Sotnikov, A.E., Trubenko, P., Moshegov, N., Ovtchinnikov, A.
Format: Conference Proceeding
Language:English
Subjects:
Gallium arsenide
Indium gallium arsenide
Optical modulation
Photoluminescence
Power lasers
Quantum well lasers
Reflectivity
Semiconductor lasers
Spectroscopy
Substrates
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Summary:In this work we introduce new effective method of modulation spectroscopy for investigation of high power semiconductor laser heterostructures and compare it with traditional photoreflectance and photoluminescence methods. We present experimental results for AlGaAs/GaAs semiconductor laser heterostructure with strained InGaAs quantum well grown on n/sup +/-GaAs substrate.
DOI:10.1109/CLEOE.2003.1312256