Lattice-matched and metamorphic GaInP/GaInAs/Ge concentrator solar cells

Recent developments in epitaxial III-V multijunction solar cell technology have allowed concentrator and 1-sun cells to reach new heights in efficiency under the terrestrial solar spectrum. The bandgaps of the GaInP and GaInAs subcells are controlled by varying indium content, up to 12% indium in th...

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Main Authors: King, R.R., Fetzer, C.M., Colter, P.C., Edmondson, K.M., Law, D.C., Stavrides, A.P., Yoon, H., Kinsey, G.S., Cotal, H.L., Ermer, J.H., Sherif, R.A., Emery, K., Metzger, W., Ahrenkiel, R.K., Karam, N.H.
Format: Conference Proceeding
Language:English
Subjects:
Epitaxial growth
Gain measurement
Indium
Laboratories
Lattices
Photonic band gap
Photovoltaic cells
Renewable energy resources
Substrates
Sun
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Summary:Recent developments in epitaxial III-V multijunction solar cell technology have allowed concentrator and 1-sun cells to reach new heights in efficiency under the terrestrial solar spectrum. The bandgaps of the GaInP and GaInAs subcells are controlled by varying indium content, up to 12% indium in the GaInAs middle cell, or 0.8% lattice mismatch. Shockley-Read-Hall recombination at dislocations in such metamorphic cells has been restricted to lower levels than previously achieved, and is compared to the lattice-matched case. Terrestrial GaInP/GaInAs/Ge 3-junction cells have been produced at Spectrolab with record efficiencies independently verified at NREL, of 31.3% for metamorphic 1-sun cells and 32.0% for lattice-matched 1-sun cells (25/spl deg/C, AM1.5G, 4.00 cm/sup 2/), and 35.2% for lattice-matched concentrator cells under the AM1.5 Direct, low-AOD spectrum (25/spl deg/C, 66 suns, 0.26 cm/sup 2/).