Direct extraction methodology for geometry-scalable RF-CMOS models

A new method to directly extract the MOSFET small-signal parameters ncluding non-quasi-static effects - from Z and Y parameter measurements is presented. This technique is employed to generate a scalable BSIM3v3 model valid for standard, low and high-threshold p- and n-channel MOSFETs at frequencies...

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Bibliographic Details
Main Authors: Voinigescu, S.P., Tazlauanu, M., Ho, P.C., Yang, M.T.
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Capacitance measurement
Data mining
Degradation
Design. Technologies. Operation analysis. Testing
Electrical resistance measurement
Electronics
Equivalent circuits
Exact sciences and technology
Frequency measurement
Integrated circuits
MOSFET circuits
Radio frequency
Scattering parameters
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Solid modeling
Testing, measurement, noise and reliability
Transistors
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Summary:A new method to directly extract the MOSFET small-signal parameters ncluding non-quasi-static effects - from Z and Y parameter measurements is presented. This technique is employed to generate a scalable BSIM3v3 model valid for standard, low and high-threshold p- and n-channel MOSFETs at frequencies up to 50 GHz. The model accurately captures cutoff frequency degradation for unit gate finger widths below 1 /spl mu/m and was employed to verify the measured jitter of a 10-Gb/s MOS-CML output driver.
DOI:10.1109/ICMTS.2004.1309486