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Direct extraction methodology for geometry-scalable RF-CMOS models
A new method to directly extract the MOSFET small-signal parameters ncluding non-quasi-static effects - from Z and Y parameter measurements is presented. This technique is employed to generate a scalable BSIM3v3 model valid for standard, low and high-threshold p- and n-channel MOSFETs at frequencies...
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| creator | Voinigescu, S.P. Tazlauanu, M. Ho, P.C. Yang, M.T. |
| description | A new method to directly extract the MOSFET small-signal parameters ncluding non-quasi-static effects - from Z and Y parameter measurements is presented. This technique is employed to generate a scalable BSIM3v3 model valid for standard, low and high-threshold p- and n-channel MOSFETs at frequencies up to 50 GHz. The model accurately captures cutoff frequency degradation for unit gate finger widths below 1 /spl mu/m and was employed to verify the measured jitter of a 10-Gb/s MOS-CML output driver. |
| doi_str_mv | 10.1109/ICMTS.2004.1309486 |
| format | conference_proceeding |
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This technique is employed to generate a scalable BSIM3v3 model valid for standard, low and high-threshold p- and n-channel MOSFETs at frequencies up to 50 GHz. The model accurately captures cutoff frequency degradation for unit gate finger widths below 1 /spl mu/m and was employed to verify the measured jitter of a 10-Gb/s MOS-CML output driver.</description><identifier>ISBN: 9780780382626</identifier><identifier>ISBN: 0780382625</identifier><identifier>DOI: 10.1109/ICMTS.2004.1309486</identifier><language>eng</language><publisher>Piscataway NJ: IEEE</publisher><subject>Applied sciences ; Capacitance measurement ; Data mining ; Degradation ; Design. Technologies. Operation analysis. Testing ; Electrical resistance measurement ; Electronics ; Equivalent circuits ; Exact sciences and technology ; Frequency measurement ; Integrated circuits ; MOSFET circuits ; Radio frequency ; Scattering parameters ; Semiconductor electronics. Microelectronics. Optoelectronics. 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Testing</subject><subject>Electrical resistance measurement</subject><subject>Electronics</subject><subject>Equivalent circuits</subject><subject>Exact sciences and technology</subject><subject>Frequency measurement</subject><subject>Integrated circuits</subject><subject>MOSFET circuits</subject><subject>Radio frequency</subject><subject>Scattering parameters</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Technologies. Operation analysis. Testing</topic><topic>Electrical resistance measurement</topic><topic>Electronics</topic><topic>Equivalent circuits</topic><topic>Exact sciences and technology</topic><topic>Frequency measurement</topic><topic>Integrated circuits</topic><topic>MOSFET circuits</topic><topic>Radio frequency</topic><topic>Scattering parameters</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. 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| identifier | ISBN: 9780780382626 |
| ispartof | Proceedings of the 2004 International Conference on Microelectronic Test Structures (IEEE Cat. No.04CH37516), 2004, p.235-240 |
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| language | eng |
| recordid | cdi_ieee_primary_1309486 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Applied sciences Capacitance measurement Data mining Degradation Design. Technologies. Operation analysis. Testing Electrical resistance measurement Electronics Equivalent circuits Exact sciences and technology Frequency measurement Integrated circuits MOSFET circuits Radio frequency Scattering parameters Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solid modeling Testing, measurement, noise and reliability Transistors |
| title | Direct extraction methodology for geometry-scalable RF-CMOS models |
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