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Integration challenges of new materials and device architectures for IC applications

In this paper, we will detail the issues with new materials being introduced into CMOS devices and present some potential solutions to enable high performance and low power CMOS for the 65nm node and beyond.

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Main Authors: Bich-Yen Nguyen, Thean, A., White, T., Vandooren, A., Sadaka, M., Mathew, L., Barr, A., Thomas, S., Zalava, M., Da Zhang, Eades, D., Zhong-Hai Shi, Schaeffer, J., Triyoso, D., Samavedam, S., Vartanian, V., Stephen, T., Goolsby, B., Zollner, S., Liu, R., Noble, R., Thien Nguyen, Dhandapani, V., Xie, B., Xang-Dong Wang, Jiang, J., Rai, R., Sadd, M., Ramon, M., Kalpat, S., Prabhu, L., Kaushik, V., Du, Y., Dao, T., Mendicino, M., Orlowski, M., Tobin, P., Mogab, J., Venkatesan, S.
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Language:English
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creator Bich-Yen Nguyen
Thean, A.
White, T.
Vandooren, A.
Sadaka, M.
Mathew, L.
Barr, A.
Thomas, S.
Zalava, M.
Da Zhang
Eades, D.
Zhong-Hai Shi
Schaeffer, J.
Triyoso, D.
Samavedam, S.
Vartanian, V.
Stephen, T.
Goolsby, B.
Zollner, S.
Liu, R.
Noble, R.
Thien Nguyen
Dhandapani, V.
Xie, B.
Xang-Dong Wang
Jiang, J.
Rai, R.
Sadd, M.
Ramon, M.
Kalpat, S.
Prabhu, L.
Kaushik, V.
Du, Y.
Dao, T.
Mendicino, M.
Orlowski, M.
Tobin, P.
Mogab, J.
Venkatesan, S.
description In this paper, we will detail the issues with new materials being introduced into CMOS devices and present some potential solutions to enable high performance and low power CMOS for the 65nm node and beyond.
doi_str_mv 10.1109/ICICDT.2004.1309953
format conference_proceeding
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identifier ISBN: 0780385284
ispartof 2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866), 2004, p.237-243
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language eng
recordid cdi_ieee_primary_1309953
source IEEE Electronic Library (IEL) Conference Proceedings
subjects Application specific integrated circuits
CMOS technology
Dielectric materials
Dielectric substrates
Electrodes
High K dielectric materials
High-K gate dielectrics
Leakage current
MOSFET circuits
Thickness control
title Integration challenges of new materials and device architectures for IC applications
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