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Integration challenges of new materials and device architectures for IC applications
In this paper, we will detail the issues with new materials being introduced into CMOS devices and present some potential solutions to enable high performance and low power CMOS for the 65nm node and beyond.
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creator | Bich-Yen Nguyen Thean, A. White, T. Vandooren, A. Sadaka, M. Mathew, L. Barr, A. Thomas, S. Zalava, M. Da Zhang Eades, D. Zhong-Hai Shi Schaeffer, J. Triyoso, D. Samavedam, S. Vartanian, V. Stephen, T. Goolsby, B. Zollner, S. Liu, R. Noble, R. Thien Nguyen Dhandapani, V. Xie, B. Xang-Dong Wang Jiang, J. Rai, R. Sadd, M. Ramon, M. Kalpat, S. Prabhu, L. Kaushik, V. Du, Y. Dao, T. Mendicino, M. Orlowski, M. Tobin, P. Mogab, J. Venkatesan, S. |
description | In this paper, we will detail the issues with new materials being introduced into CMOS devices and present some potential solutions to enable high performance and low power CMOS for the 65nm node and beyond. |
doi_str_mv | 10.1109/ICICDT.2004.1309953 |
format | conference_proceeding |
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identifier | ISBN: 0780385284 |
ispartof | 2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866), 2004, p.237-243 |
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language | eng |
recordid | cdi_ieee_primary_1309953 |
source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Application specific integrated circuits CMOS technology Dielectric materials Dielectric substrates Electrodes High K dielectric materials High-K gate dielectrics Leakage current MOSFET circuits Thickness control |
title | Integration challenges of new materials and device architectures for IC applications |
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