High-quality red laser material grown by solid-source molecular beam epitaxy

We present high-quality AlGaInP/GaInP heterostructures for visible light laser diodes. Material quality is validated by processing lasers at 650 nm. Over 2 W output and a low threshold current density was obtained.

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Bibliographic Details
Main Authors: Toikkanen, L.J., Tukiainen, A.K., Hirvonen, I.A.T., Pessa, M.
Format: Conference Proceeding
Language:English
Subjects:
Diode lasers
Laser beam cutting
Molecular beam epitaxial growth
Optical materials
Optical pumping
Optical recording
Pump lasers
Quantum well lasers
Solid lasers
Threshold current
Online Access:Request full text
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Description
Summary:We present high-quality AlGaInP/GaInP heterostructures for visible light laser diodes. Material quality is validated by processing lasers at 650 nm. Over 2 W output and a low threshold current density was obtained.
DOI:10.1109/CLEOE.2003.1312207