High-quality red laser material grown by solid-source molecular beam epitaxy

We present high-quality AlGaInP/GaInP heterostructures for visible light laser diodes. Material quality is validated by processing lasers at 650 nm. Over 2 W output and a low threshold current density was obtained.

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Main Authors: Toikkanen, L.J., Tukiainen, A.K., Hirvonen, I.A.T., Pessa, M.
Format: Conference Proceeding
Language:English
Subjects:
Diode lasers
Laser beam cutting
Molecular beam epitaxial growth
Optical materials
Optical pumping
Optical recording
Pump lasers
Quantum well lasers
Solid lasers
Threshold current
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creator Toikkanen, L.J.
Tukiainen, A.K.
Hirvonen, I.A.T.
Pessa, M.
description We present high-quality AlGaInP/GaInP heterostructures for visible light laser diodes. Material quality is validated by processing lasers at 650 nm. Over 2 W output and a low threshold current density was obtained.
doi_str_mv 10.1109/CLEOE.2003.1312207
format conference_proceeding
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identifier ISBN: 0780377346
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Diode lasers
Laser beam cutting
Molecular beam epitaxial growth
Optical materials
Optical pumping
Optical recording
Pump lasers
Quantum well lasers
Solid lasers
Threshold current
title High-quality red laser material grown by solid-source molecular beam epitaxy
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