Enhanced self-mode-locking in broad area semiconductor lasers by pulse injection

In this paper we give evidence that in free-running broad area semiconductor lasers (BALs) weak self-mode-locking of longitudinal modes already exists, leading to a fast regular intensity modulation of the output at the cavity round trip time. This fast dynamics deteriorates the output in terms of s...

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Main Authors: Kaiser, J., Fischer, I., Elsaber, W.
Format: Conference Proceeding
Language:English
Subjects:
Cameras
Intensity modulation
Laser mode locking
Laser modes
Laser stability
Laser theory
Optical coupling
Optical pulse generation
Optical pulses
Semiconductor lasers
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Fischer, I.
Elsaber, W.
description In this paper we give evidence that in free-running broad area semiconductor lasers (BALs) weak self-mode-locking of longitudinal modes already exists, leading to a fast regular intensity modulation of the output at the cavity round trip time. This fast dynamics deteriorates the output in terms of spectral width and temporal stability on the one hand, but on the other hand it could also offer an interesting possibility for optical pulse generation in these semiconductor laser devices. In fact, a significant improvement of the pulsed output has been achieved by additional injection of a picosecond pulse into the device.
doi_str_mv 10.1109/CLEOE.2003.1312227
format conference_proceeding
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Cameras
Intensity modulation
Laser mode locking
Laser modes
Laser stability
Laser theory
Optical coupling
Optical pulse generation
Optical pulses
Semiconductor lasers
title Enhanced self-mode-locking in broad area semiconductor lasers by pulse injection
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