Optical and laser properties of epitaxially grown passively Q-switched Cr/sup 4+/:GGG/ Nd/sup 3+/:GGG, Cr/sup 4+/:YAG/ Yb/sup 3+/:YAG and Cr/sup 4+/:YAG/ Nd/sup 3+/ :YAG microchip lasers

Liquid phase epitaxy technique is used to grow Cr/sup 4+/ doped GGG and YAG monocrystalline thin films as a saturable absorber for passive Q-switching of Nd:GGG, Yb:YAG and Nd:YAG microchip lasers. Comparison of laser performance and influence of epitaxial film saturable absorber properties on micro...

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Main Authors: Kopczynski, K., Sarnecki, J., Mierczyk, Z., Skwarcz, J., Kwasny, M., Mlynczak, J., Ubizski, S.B., Syvorotka, I.M., Melnyk, S., Matkowski, A.
Format: Conference Proceeding
Language:English
Subjects:
Chromium
Epitaxial growth
Neodymium
Optical films
Optical saturation
Q-switched lasers
Ytterbium
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Summary:Liquid phase epitaxy technique is used to grow Cr/sup 4+/ doped GGG and YAG monocrystalline thin films as a saturable absorber for passive Q-switching of Nd:GGG, Yb:YAG and Nd:YAG microchip lasers. Comparison of laser performance and influence of epitaxial film saturable absorber properties on microchip characteristics (repetition rate, pulse energy and pulse length) are reported.
DOI:10.1109/EQEC.2003.1314310