The influence of bulk parameters on the switching behavior of FWDs for traction application

We investigate the performance of free wheeling diodes (FWDs) for traction application. Since there is experimental evidence of well designed junction termination, we concentrate on bulk effects. By numerical simulation the influence of bulk doping and base width on the dynamic characteristics of FW...

Full description

Saved in:
Bibliographic Details
Main Authors: Felsl, H.P., Falck, E., Pfaffenlehner, M., Lutz, J.
Format: Conference Proceeding
Language:English
Subjects:
Analytical models
Applied sciences
Circuit analysis
Circuit simulation
Diodes
Doping
Electronics
Exact sciences and technology
Insulated gate bipolar transistors
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Switches
Switching circuits
Transient analysis
Voltage
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 156 vol.1
container_issue
container_start_page 153
container_title
container_volume 1
creator Felsl, H.P.
Falck, E.
Pfaffenlehner, M.
Lutz, J.
description We investigate the performance of free wheeling diodes (FWDs) for traction application. Since there is experimental evidence of well designed junction termination, we concentrate on bulk effects. By numerical simulation the influence of bulk doping and base width on the dynamic characteristics of FWDs is analyzed. As limiting criterium for snap-off behavior the reach-through of the space-charge region to the nn/sup +/-emitter region is found. Measurements are in good agreement with the simulations.
doi_str_mv 10.1109/ICMEL.2004.1314577
format conference_proceeding
fullrecord <record><control><sourceid>pascalfrancis_6IE</sourceid><recordid>TN_cdi_ieee_primary_1314577</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1314577</ieee_id><sourcerecordid>17526394</sourcerecordid><originalsourceid>FETCH-LOGICAL-i135t-c6eaaf7709f4d8f3f8984d419eea6038f069c7e0afbe65dc3f446119c26d6bd13</originalsourceid><addsrcrecordid>eNpF0MFKAzEQBuCACGrtC-glF49dM5tssjlKbbVQ8VLx4KHMZic2ut0uyVbx7d1SwbnMD_MxDMPYFYgMQNjbxfRptsxyIVQGElRhzAm7EKYUsgSt4YyNU_oQQ0lbKJufs7fVhnhofbOn1hHfeV7tm0_eYcQt9RQT37W8H0z6Dr3bhPadV7TBr7CLBzx_vU_cD7mP6PowWOy6Jjg85Et26rFJNP7rI_Yyn62mj5Pl88NierecBJBFP3GaEL0xwnpVl1760paqVmCJUA-He6GtMyTQV6SL2kmvlAawLte1rmqQI3Zz3Nthctj4iK0Lad3FsMX4swZT5FpaNbjrowtE9D8-_kn-AryXXx8</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>The influence of bulk parameters on the switching behavior of FWDs for traction application</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Felsl, H.P. ; Falck, E. ; Pfaffenlehner, M. ; Lutz, J.</creator><creatorcontrib>Felsl, H.P. ; Falck, E. ; Pfaffenlehner, M. ; Lutz, J.</creatorcontrib><description>We investigate the performance of free wheeling diodes (FWDs) for traction application. Since there is experimental evidence of well designed junction termination, we concentrate on bulk effects. By numerical simulation the influence of bulk doping and base width on the dynamic characteristics of FWDs is analyzed. As limiting criterium for snap-off behavior the reach-through of the space-charge region to the nn/sup +/-emitter region is found. Measurements are in good agreement with the simulations.</description><identifier>ISBN: 0780381661</identifier><identifier>ISBN: 9780780381667</identifier><identifier>DOI: 10.1109/ICMEL.2004.1314577</identifier><language>eng</language><publisher>Piscataway NJ: IEEE</publisher><subject>Analytical models ; Applied sciences ; Circuit analysis ; Circuit simulation ; Diodes ; Doping ; Electronics ; Exact sciences and technology ; Insulated gate bipolar transistors ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Switches ; Switching circuits ; Transient analysis ; Voltage</subject><ispartof>2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716), 2004, Vol.1, p.153-156 vol.1</ispartof><rights>2006 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1314577$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1314577$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=17526394$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Felsl, H.P.</creatorcontrib><creatorcontrib>Falck, E.</creatorcontrib><creatorcontrib>Pfaffenlehner, M.</creatorcontrib><creatorcontrib>Lutz, J.</creatorcontrib><title>The influence of bulk parameters on the switching behavior of FWDs for traction application</title><title>2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)</title><addtitle>ICMEL</addtitle><description>We investigate the performance of free wheeling diodes (FWDs) for traction application. Since there is experimental evidence of well designed junction termination, we concentrate on bulk effects. By numerical simulation the influence of bulk doping and base width on the dynamic characteristics of FWDs is analyzed. As limiting criterium for snap-off behavior the reach-through of the space-charge region to the nn/sup +/-emitter region is found. Measurements are in good agreement with the simulations.</description><subject>Analytical models</subject><subject>Applied sciences</subject><subject>Circuit analysis</subject><subject>Circuit simulation</subject><subject>Diodes</subject><subject>Doping</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Insulated gate bipolar transistors</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Switches</subject><subject>Switching circuits</subject><subject>Transient analysis</subject><subject>Voltage</subject><isbn>0780381661</isbn><isbn>9780780381667</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2004</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNpF0MFKAzEQBuCACGrtC-glF49dM5tssjlKbbVQ8VLx4KHMZic2ut0uyVbx7d1SwbnMD_MxDMPYFYgMQNjbxfRptsxyIVQGElRhzAm7EKYUsgSt4YyNU_oQQ0lbKJufs7fVhnhofbOn1hHfeV7tm0_eYcQt9RQT37W8H0z6Dr3bhPadV7TBr7CLBzx_vU_cD7mP6PowWOy6Jjg85Et26rFJNP7rI_Yyn62mj5Pl88NierecBJBFP3GaEL0xwnpVl1760paqVmCJUA-He6GtMyTQV6SL2kmvlAawLte1rmqQI3Zz3Nthctj4iK0Lad3FsMX4swZT5FpaNbjrowtE9D8-_kn-AryXXx8</recordid><startdate>2004</startdate><enddate>2004</enddate><creator>Felsl, H.P.</creator><creator>Falck, E.</creator><creator>Pfaffenlehner, M.</creator><creator>Lutz, J.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope><scope>IQODW</scope></search><sort><creationdate>2004</creationdate><title>The influence of bulk parameters on the switching behavior of FWDs for traction application</title><author>Felsl, H.P. ; Falck, E. ; Pfaffenlehner, M. ; Lutz, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i135t-c6eaaf7709f4d8f3f8984d419eea6038f069c7e0afbe65dc3f446119c26d6bd13</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Analytical models</topic><topic>Applied sciences</topic><topic>Circuit analysis</topic><topic>Circuit simulation</topic><topic>Diodes</topic><topic>Doping</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Insulated gate bipolar transistors</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Switches</topic><topic>Switching circuits</topic><topic>Transient analysis</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Felsl, H.P.</creatorcontrib><creatorcontrib>Falck, E.</creatorcontrib><creatorcontrib>Pfaffenlehner, M.</creatorcontrib><creatorcontrib>Lutz, J.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library Online</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection><collection>Pascal-Francis</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Felsl, H.P.</au><au>Falck, E.</au><au>Pfaffenlehner, M.</au><au>Lutz, J.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>The influence of bulk parameters on the switching behavior of FWDs for traction application</atitle><btitle>2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)</btitle><stitle>ICMEL</stitle><date>2004</date><risdate>2004</risdate><volume>1</volume><spage>153</spage><epage>156 vol.1</epage><pages>153-156 vol.1</pages><isbn>0780381661</isbn><isbn>9780780381667</isbn><abstract>We investigate the performance of free wheeling diodes (FWDs) for traction application. Since there is experimental evidence of well designed junction termination, we concentrate on bulk effects. By numerical simulation the influence of bulk doping and base width on the dynamic characteristics of FWDs is analyzed. As limiting criterium for snap-off behavior the reach-through of the space-charge region to the nn/sup +/-emitter region is found. Measurements are in good agreement with the simulations.</abstract><cop>Piscataway NJ</cop><pub>IEEE</pub><doi>10.1109/ICMEL.2004.1314577</doi></addata></record>
fulltext fulltext_linktorsrc
identifier ISBN: 0780381661
ispartof 2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716), 2004, Vol.1, p.153-156 vol.1
issn
language eng
recordid cdi_ieee_primary_1314577
source IEEE Electronic Library (IEL) Conference Proceedings
subjects Analytical models
Applied sciences
Circuit analysis
Circuit simulation
Diodes
Doping
Electronics
Exact sciences and technology
Insulated gate bipolar transistors
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Switches
Switching circuits
Transient analysis
Voltage
title The influence of bulk parameters on the switching behavior of FWDs for traction application
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T19%3A25%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=The%20influence%20of%20bulk%20parameters%20on%20the%20switching%20behavior%20of%20FWDs%20for%20traction%20application&rft.btitle=2004%2024th%20International%20Conference%20on%20Microelectronics%20(IEEE%20Cat.%20No.04TH8716)&rft.au=Felsl,%20H.P.&rft.date=2004&rft.volume=1&rft.spage=153&rft.epage=156%20vol.1&rft.pages=153-156%20vol.1&rft.isbn=0780381661&rft.isbn_list=9780780381667&rft_id=info:doi/10.1109/ICMEL.2004.1314577&rft_dat=%3Cpascalfrancis_6IE%3E17526394%3C/pascalfrancis_6IE%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i135t-c6eaaf7709f4d8f3f8984d419eea6038f069c7e0afbe65dc3f446119c26d6bd13%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1314577&rfr_iscdi=true